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IRFR3411

Part Number	IRFR3411
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 13, 2020
Detailed Description	isc N-Channel MOSFET Transistor IRFR3411, IIRFR3411 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤44mΩ ·Enhanc...
Datasheet	IRFR3411 PDF File

Overview

isc N-Channel MOSFET Transistor IRFR3411, IIRFR3411 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤44mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast Switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 32 IDM Drain Current-Single Pulsed 110 PD Total Dissipation @TC=25℃ 130 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j...

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