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EPC2034C

EPC

Power Transistor


Description
eGaN® FET DATASHEET EPC2034C – Enhancement Mode Power Transistor VDS , 200 V RDS(on) , 8 mΩ ID , 48 A D G S EPC2034C EFFICIENT POWER CONVERSION HAL Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and ...



EPC

EPC2034C

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