N-Channel MOSFET
Description
Product Summary
V(BR)DSS
RDS(on)MAX
ID
25mΩ@4.5V
20V
6A
32mΩ@2.5V
FS8205A
N-Channel Enhancement Mode MOSFET
Feature
Advanced trench process technology High density cell design for ultra low on-resistance
Application
Battery protection Switching application
Package
Circuit diagram
SOT-23-6L
Marking
G1 D1/D2 G2
8205A
S1 D1/D2 S2
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