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FDB6676

Fairchild Semiconductor
Part Number FDB6676
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description FDP6676/FDB6676 April 2001 FDP6676/FDB6676 30V N-Channel Logic Level PowerTrench MOSFET General Description This N-Ch...
Datasheet PDF File FDB6676 PDF File

FDB6676
FDB6676

Overview
FDP6676/FDB6676 April 2001 FDP6676/FDB6676 30V N-Channel Logic Level PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) .
Features • 42 A, 30 V.
RDS(ON) = 6.
0 mΩ @ VGS = 10 V RDS(ON) = 7.
5 mΩ @ VGS = 4.
5 V • Critical DC electrical parameters specified at elevated temperature • High performance trench technology for extremely low RDS(ON) • 175°C maximum junction temperature rating Applications • Synchronous rectifier • DC/DC converter .
D D G G D S TO-220 FDP Series G S TO-263AB FDB Series S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25oC unless otherwise noted Parameter Ratings 30 ± 16 (Note 1) (Note 1) Units V V...


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