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IRF624B

Fairchild Semiconductor
Part Number IRF624B
Manufacturer Fairchild Semiconductor
Description 250V N-Channel MOSFET
Published Apr 16, 2005
Detailed Description IRF624B/IRFS624B November 2001 IRF624B/IRFS624B 250V N-Channel MOSFET General Description These N-Channel enhancement ...
Datasheet PDF File IRF624B PDF File

IRF624B
IRF624B

Overview
IRF624B/IRFS624B November 2001 IRF624B/IRFS624B 250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies.
Features • • • • • • 4.
1A, 250V, RDS(on) = 1.
1Ω @VGS = 10 V Low gate charge ( typical 13.
5 nC) Low Crss ( typical 9.
5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G G DS TO-220 IRF Series GD S TO-220F IRFS Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Cu...


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