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IRF630B

Fairchild Semiconductor
Part Number IRF630B
Manufacturer Fairchild Semiconductor
Description 200V N-Channel MOSFET
Published Apr 16, 2005
Detailed Description IRF630B/IRFS630B IRF630B/IRFS630B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power fiel...
Datasheet PDF File IRF630B PDF File

IRF630B
IRF630B

Overview
IRF630B/IRFS630B IRF630B/IRFS630B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.
Features • • • • • • 9.
0A, 200V, RDS(on) = 0.
4Ω @VGS = 10 V Low gate charge ( typical 22 nC) Low Crss ( typical 22 pF)...


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