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IRF640FP

STMicroelectronics
Part Number IRF640FP
Manufacturer STMicroelectronics
Description N-Channel MOSFET
Published Apr 16, 2005
Detailed Description ® IRF640 IRF640FP N - CHANNEL 200V - 0.150Ω - 18A TO-220/TO-220FP MESH OVERLAY™ MOSFET TYPE IRF640 IRF640FP s s s s V...
Datasheet PDF File IRF640FP PDF File

IRF640FP
IRF640FP

Overview
® IRF640 IRF640FP N - CHANNEL 200V - 0.
150Ω - 18A TO-220/TO-220FP MESH OVERLAY™ MOSFET TYPE IRF640 IRF640FP s s s s V DSS 200 V 200 V R DS(on) < 0.
18 Ω < 0.
18 Ω ID 18 A 18 A TYPICAL RDS(on) = 0.
150 Ω EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 1 2 1 2 3 DESCRIPTION This power MOSFET is designed using he company’s consolidated strip layout-based MESH OVERLAY™ process.
This technology matches and improves the performances compared with standard parts from various sources.
TO-220 TO-220FP APPLICATIONS s HIGH CURRENT SWITCHING s UNINTERRUPTIBLE POWER SUPPLY (UPS) s DC/DC COVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT.
INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID I DM ( • ) P tot dv/dt( 1 ) V ISO Ts tg Tj Parameter IRF640 Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 o C Drain Current (continuous) at Tc = 100...


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