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IRF7306

Part Number	IRF7306
Manufacturer	International Rectifier
Description	HEXFET Power MOSFET
Published	Apr 16, 2005
Detailed Description	PD - 9.1241C IRF7306 HEXFET® Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance Dual P-Channel...
Datasheet	IRF7306 PDF File

Overview

PD - 9.
1241C IRF7306 HEXFET® Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance Dual P-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching S1 G1 S2 G2 1 8 D1 D1 D2 D2 2 7 VDSS = -30V RDS(on) = 0.
10Ω 3 6 4 5 Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The SO-8 has been mod...

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