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IRF7307

International Rectifier
Part Number IRF7307
Manufacturer International Rectifier
Description Power MOSFET
Published Apr 16, 2005
Detailed Description l Generation V Technology l Ultra Low On-Resistance l Dual N and P Channel Mosfet l Surface Mount l Available in Tape & ...
Datasheet PDF File IRF7307 PDF File

IRF7307
IRF7307

Overview
l Generation V Technology l Ultra Low On-Resistance l Dual N and P Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.
With these improvements, multiple devices can be used in an application with dramatically reduced board space.
The package is designed for vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.
8W is possible in a typical PCB mount application.
PD - 95179 IRF7307PbF HEXFET® Power MOSFET N-CHANNEL MOSFET S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 P-CHANNEL MOSFET Top View N-Ch P-Ch VDSS 20V -20V RDS(on) 0.
050Ω 0.
090Ω SO-8 Absolute Maximum Ratings ID @ TA = 25°C ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ, TSTG Parameter 10 Sec.
Pulse Drain Current, VGS @ 4.
5V Continuous Drain Current, VGS @ 4.
5V Continuous Drain Current, VGS @ 4.
5V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ‚ Junction and Storage Temperature Range Max.
N-Channel P-Channel 5.
7 -4.
7 5.
2 -4.
3 4.
1 -3.
4 21 -17 2.
0 0.
016 ± 12 5.
0 -5.
0 -55 to + 150 Units A W W/°C V V/ns °C Thermal Resistance Ratings Parameter RθJA Maximum Junction-to-Ambient„ Typ.
––– Max.
62.
5 Units °C/W 10/7/04 IRF7307PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS Parameter Drain-to-Source Breakdown Vo...


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