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IRF730B

Fairchild Semiconductor
Part Number IRF730B
Manufacturer Fairchild Semiconductor
Description 400V N-Channel MOSFET
Published Apr 16, 2005
Detailed Description IRF730B/IRFS730B November 2001 IRF730B/IRFS730B 400V N-Channel MOSFET General Description These N-Channel enhancement ...
Datasheet PDF File IRF730B PDF File

IRF730B
IRF730B


Overview
IRF730B/IRFS730B November 2001 IRF730B/IRFS730B 400V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supplies and electronic lamp ballasts based on half bridge.
Features • • • • • • 5.
5A, 400V, RDS(on) = 1.
0Ω @VGS = 10 V Low gate charge ( typical 25 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche...



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