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IRF820B

Fairchild Semiconductor
Part Number IRF820B
Manufacturer Fairchild Semiconductor
Description 500V N-Channel MOSFET
Published Apr 16, 2005
Detailed Description IRF820B/IRFS820B November 2001 IRF820B/IRFS820B 500V N-Channel MOSFET General Description These N-Channel enhancement ...
Datasheet PDF File IRF820B PDF File

IRF820B
IRF820B

Overview
IRF820B/IRFS820B November 2001 IRF820B/IRFS820B 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge.
Features • • • • • • 2.
5A, 500V, RDS(on) = 2.
6Ω @VGS = 10 V Low gate charge ( typical 14 nC) Low Crss ( typical 10 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G G DS TO-220 IRF Series GD S TO-220F IRFS Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain C...


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