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ZTX752

Zetex Semiconductors
Part Number ZTX752
Manufacturer Zetex Semiconductors
Description PNP SILICON PLANAR MEDIUM POWER TRANSISTORS
Published Apr 17, 2005
Detailed Description PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 2 – JULY 94 FEATURES * 100 Volt VCEO * 2 Amp continuous current * Low ...
Datasheet PDF File ZTX752 PDF File

ZTX752
ZTX752

Overview
PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 2 – JULY 94 FEATURES * 100 Volt VCEO * 2 Amp continuous current * Low saturation voltage * Ptot=1 Watt ZTX752 ZTX753 C B E ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C derate above 25°C SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg ZTX752 -100 -80 -5 -6 -2 1 5.
7 E-Line TO92 Compatible ZTX753 -120 -100 UNIT V V V A A W mW/°C °C Operating and Storage Temperature Range -55 to +200 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current ZTX752 ZTX753 SYMBOL MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
UNIT CONDITIONS.
V(BR)CBO V(BR)CEO V(BR)EBO ICBO -100 -80 -5 -0.
1 -10 IEBO -0.
1 -0.
17 -0.
3 -0.
30 -0.
5 -0.
9 -0.
8 -1.
25 -1 -120 -100 -5 V V V µA µA µA µA µA IC=-100µA IC=-10mA* IE=-100µA VCB=-80V VCB=-100V VCB=-80V,Tamb=100°C VCB=-100V,Tamb=100°C VEB=-4V IC=-1A, IB=-100mA* IC=-2A, IB=-200mA* IC=-1A, IB=-100mA* IC=-1A, VCE=-2V* -0.
1 -10 -0.
1 -0.
17 -0.
3 -0.
30 -0.
5 -0.
9 -0.
8 Emitter Cut-Off Current Collector-Emitter VCE(sat) Saturation Voltage Base-Emitter VBE(sat) Saturation Voltage Base-Emitter Turn-On Voltage VBE(on) V V -1.
25 V -1 V 3-260 ZTX752 ZTX753 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER SYMBOL ZTX752 MIN.
TYP.
100 140 40 600 30 ZTX753 MAX.
MIN.
TYP.
100 140 40 600 30 MAX.
UNIT CONDITIONS.
Transition Frequency Switching Times fT ton toff MHz ns ns pF IC=-100mA, VCE=-5V f=100MHz IC=-500mA, VCC=-10V IB1=IB2=-50mA VCB=10V f=1MHz Output Capacitance Cobo *Measured under pulsed conditions.
Pulse width=300µs.
Duty cycle ≤ 2% THERMAL CHARACTERISTICS PARAMETER Thermal Resistance:Junction to Ambient1 Junction to Ambient2 Junction to Case SYMBOL Rth(j-amb)1 Rth(j-amb)2† Rth(j-case) MAX.
175 116 70 UNIT °C/W °C/W °C/W † Device m...


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