DatasheetsPDF.com

IRG4BC30S

International Rectifier
Part Number IRG4BC30S
Manufacturer International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Published Jul 27, 2005
Detailed Description PD - 91593A IRG4BC30S INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: optimized for minimum saturation voltage a...
Datasheet PDF File IRG4BC30S PDF File

IRG4BC30S
IRG4BC30S

Overview
PD - 91593A IRG4BC30S INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: optimized for minimum saturation voltage and low operating frequencies ( < 1kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package C Standard Speed IGBT VCES = 600V G E VCE(on) typ.
= 1.
4V @VGE = 15V, IC = 18A n-channel Benefits • Generation 4 IGBTs offer highest efficiency available • IGBTs optimized for specified application conditions • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs TO-220AB Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw.
Max.
600 34 18 68 68 ± 20 10 100 42 -55 to + 150 300 (0.
063 in.
(1.
6mm) from case ) 10 lbf•in (1.
1N•m) Units V A V mJ W °C Thermal Resistance Parameter RθJC RθCS RθJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight Typ.
––– 0.
50 ––– 2.
0 (0.
07) Max.
1.
2 ––– 80 ––– Units °C/W g (oz) www.
irf.
com 1 4/17/2000 IRG4BC30S Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES V(BR)ECS ∆V(BR)CES/∆TJ VCE(ON) VGE(th) ∆VGE(th)/∆TJ gfe ICES IGES Parameter Min.
Typ.
Max.
Units Collector-to-Emitter Breakdown Voltage 600 — — V Emitter-to-Collector Breakdown Voltage T 18 — — V Temperature Coeff.
of Breakdown Voltage — 0.
75 — V/°C — 1.
40 1.
6 Collector-to-Emitter Saturation Voltage — 1.
84 — V — 1.
45 — Gate Threshold Voltage 3.
0 — 6.
0 Temperature Coeff.
of Threshold Voltage — ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)