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TIM1414-8

Toshiba
Part Number TIM1414-8
Manufacturer Toshiba
Description Microwave Power GaAs FET
Published Jul 30, 2006
Detailed Description www.DataSheet4U.com TOSHIBA MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (X, Ku-Band) Features • High po...
Datasheet PDF File TIM1414-8 PDF File

TIM1414-8
TIM1414-8

Overview
www.
DataSheet4U.
com TOSHIBA MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (X, Ku-Band) Features • High power - P1dB =39.
5 dBm at 14.
0 GHz to14.
5 GHz • High gain - G1dB = 5.
0 dB at 14.
0 GHz to 14.
5 GHz • Broad Band Internally Matched • Hermetically sealed package RF Performance Specifications (Ta = 25° C) Characteristics Output Power at 1dB Compression Point Power Gain at 1dB Compression Point Drain Current Power Added Efficiency Channel-Temperature Rise Symbol P1dB G1dB IDS ηadd ∆Tch VDS X IDS X Rth(c-c) VDS = 9V f = 14.
0 ~ 14.
5GHz Condition Unit dBm dB A % °C Min.
38.
5 4.
0 – – – Typ.
39.
5 5.
0 3.
4 20 – Max – – 4.
4 – 80 TIM1414-8 DataShee Electrical Characteristics (Ta = 25° C) Characteristic Trans-conductance Pinch-off Voltage Saturated Drain Current Gate to Source Breakdown Voltage Thermal Resistance Symbol gm VGSoff IDSS VGSO Rth (c-c) DataSheet4U.
com Condition VDS=3V IDS=4.
0 A VDS=3V IDS=120mA VDS=3V VGS=0V IGS=-120 µA Channel to case Unit mS V A V °C/W Min.
– -2 – ...


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