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2N7369

Microsemi Corporation
Part Number 2N7369
Manufacturer Microsemi Corporation
Description PNP HIGH POWER SILICON TRANSISTOR
Published Aug 1, 2006
Detailed Description www.DataSheet4U.com TECHNICAL DATA PNP HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/621 Devices 2N7369 Qua...
Datasheet PDF File 2N7369 PDF File

2N7369
2N7369


Overview
www.
DataSheet4U.
com TECHNICAL DATA PNP HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/621 Devices 2N7369 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Symbol Value Units Vdc Vdc Vdc Adc Adc W 0 C Unit 0 C/W Collector-Emitter Voltage 80 VCEO Collector-Base Voltage 80 VCBO Emitter-Base Voltage 7.
0 VEBO Base Current IB 4.
0 Collector Current 10 IC DataSheet4U.
com Total Power Dissipation @ TC = +250C (1) 115 PT Operating & Storage Junction Temperature Range -65 to +200 TJ, Tstg DataShee THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Symbol RθJC 0 Max.
1.
5 TO-254* 1) Derate linearly 0.
657 W/ C for TC > 25 C *See appendix A for package outline 0 ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol Min.
Max.
Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 0.
2 Adc Collector-Emitter Cutoff Current VCE = 70 Vdc Collector-Emitter Cutoff Current VCE = 80 Vdc, VBE = 1.
5 Vdc Emitter-Bas...



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