Advanced Power MOSFET
Description
Advanced Power MOSFET
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current : 10 µA (Max.) @ VDS = 250V ♦ Low RDS(ON) : 0.742 Ω (Typ.)
IRF624A
BVDSS = 250 V RDS(on) = 1.1 Ω ID = 4.1 A
TO-220
1 2 3
1.Gate 2. Drain 3. Source
Absolute Maxi...
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