HEXFET Power MOSFET
Description
PD - 91456E
IRG4BC40U
INSULATED GATE BIPOLAR TRANSISTOR
Features
UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 Industry standard TO-220AB package
C
UltraFast Speed IGBT
VCES = 600V
G E
...
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