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AO4818

Alpha & Omega Semiconductors
Part Number AO4818
Manufacturer Alpha & Omega Semiconductors
Description 30V Dual N-channel MOSFET
Published Jun 7, 2007
Detailed Description AO4818 30V Dual N-channel MOSFET General Description Product Summary The AO4818 uses advanced trench technology to pr...
Datasheet PDF File AO4818 PDF File

AO4818
AO4818

Overview
AO4818 30V Dual N-channel MOSFET General Description Product Summary The AO4818 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
This device is suitable for use as a load switch or in PWM applications.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.
5V) ESD Protected 100% UIS Tested 100% Rg Tested 30V 8A <19mΩ < 23mΩ Top View SOIC-8 Bottom View Top View S2 1 G2 2 S1 3 G1 4 8 7 6 5 D2 D2 D1 D1 G Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.
1mH C ID IDM IAS, IAR EAS, EAR TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 8 6.
5 48 19 18 2 1.
3 -55 to 150 D G S Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 48 74 32 Max 62.
5 90 40 D S Units V V A A mJ W °C Units °C/W °C/W °C/W Rev 7 : Feb.
2011 www.
aosmd.
com Page 1 of 6 AO4818 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C 1 µA 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 10 µA VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.
2 1.
8 2.
4 V ID(ON) On state drain current VGS=10V, VDS=5V 30 A RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=8A TJ=125°C 15.
5 19 21 25 mΩ VGS=4.
5V, ID=4A 18.
5 23 mΩ gFS Forward Transconductance VDS=5V, ID=8A 30 S VSD Diode Forward Voltage IS=1A,VGS=0V 0.
75 1 V IS Maximum Body-Diode Continuous Current 2.
5 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capaci...


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