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MRF286S

Part Number	MRF286S
Manufacturer	Motorola
Description	The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors
Published	Dec 10, 2007
Detailed Description	www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document from WISD RF Marketing The RF Sub–Micr...
Datasheet	MRF286S PDF File

Overview

www.
DataSheet4U.
com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document from WISD RF Marketing The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1000 to 2400 MHz.
Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.
To be used in class A and class AB for PCN–PCS/cellular radio and WLL applications.
• Specified Two–Tone Performance @ 2000 MHz, 26 Volts Output Power — 60 Watts (PEP) Power Gain — 9.
5 dB Intermodulation Distortion — –28 dBc • Typical Two–Tone Performance at 2000 MHz, 26 Volts Output Power — 60 Watts (PEP) Power Gain — 10.
5 d...

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