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2SC6075

Toshiba Semiconductor

Silicon NPN Transistor


Description
2SC6075 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6075 Power Amplifier Applications Power Switching Applications Low collector emitter saturation voltage : VCE (sat) = 0.5 V (max)(IC = 1A) High-speed switching: tstg = 0.4 μs (typ) www.DataSheet4U.com Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitt...



Toshiba Semiconductor

2SC6075

PDF File 2SC6075 PDF File


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