Silicon NPN Transistor
Description
2SC6075
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC6075
Power Amplifier Applications Power Switching Applications
Low collector emitter saturation voltage : VCE (sat) = 0.5 V (max)(IC = 1A) High-speed switching: tstg = 0.4 μs (typ)
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Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Collector-base voltage Collector-emitt...
Toshiba Semiconductor
2SC6075 PDF File
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