Silicon NPN Transistor
Description
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC6076
Power Amplifier Applications Power Switching Applications
2SC6076
Unit: mm
Low collector saturation voltage: VCE (sat) = 0.5 V (max) ( IC = 1A) High-speed switching: tstg = 0.4 μs (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage Col...
Toshiba Semiconductor
2SC6076 PDF File
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