High Speed Switching diode
Description
CYStech Electronics Corp.
www.DataSheet4U.com
Spec. No. : C606E3 Issued Date : 2004.08.18
Revised Date : Page No. : 1/4
Low Vcesat NPN Epitaxial Planar Transistor
BTN3501E3
Low VCE(sat) High BVCEO Excellent current gain characteristics
Features
Symbol
BTN3501E3
Outline
TO-220AB
B：Base C：Collector E：Emitter
BCE
Absolute Maximum Ratings (Ta=25°C...
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