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BTN3501I3
High Speed Switching diode
Description
CYStech Electronics Corp. Low Vcesat
NPN
Epitaxial Planar
Transistor
BTN3501I3 Features Low VCE(sat) High BVCEO Excellent current gain characteristics RoHS compliant package BVCEO IC RCESAT Spec. No. : C606I3 Issued Date : 2003.11.25 Revised Date : 2009.02.04 Page No. : 1/5 80V 8A 60mΩ Symbol BTN3501I3 Outline TO-251 B：Base C：Collector E：Emitt...
Cystech Electonics
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