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2SK2390

Silicon N-Channel MOS FET

Description

www.DataSheet4U.com 2SK2390 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC-DC converter Avalanche ratings Outline TO-220CFM D G 12 3 1. Gate 2. Drain 3....

Hitachi Semiconductor

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