Dual P-Channel Enhancement Mode Field Effect Transistor
Description
www.DataSheet4U.com
AO8801 Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO8801 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product AO8801 ...
