Dual N-Channel Enhancement Mode Field Effect Transistor
Description
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AO8808 Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO8808 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V V GS(MAX) rating. This device is suitable for use as a uni-directional or bidirectional load swit...
