Dual N-Channel Enhancement Mode Field Effect Transistor
Description
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AO8808A Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO8808A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. Standard Product AO8808A is Pb-free (meets ROHS & Sony 25...
