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K3114

NEC
Part Number K3114
Manufacturer NEC
Description 2SK3114
Published Nov 22, 2009
Detailed Description DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3114 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION P...
Datasheet PDF File K3114 PDF File

K3114
K3114

Overview
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3114 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3114 PACKAGE Isolated TO-220 DESCRIPTION The 2SK3114 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.
FEATURES • Low on-state resistance: RDS(on) = 2.
2 Ω MAX.
(VGS = 10 V, ID = 2.
0 A) • Low gate charge: QG = 15 nC TYP.
(VDD = 450 V, VGS = 10 V, ID = 4.
0 A) • Gate voltage rating: ±30 V • Avalanche capability ratings • Isolated TO-220 package 5 (Isolated TO-220) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 600 ±30 ±4.
0 ±16 30 2.
0 150 –55 to +150 4.
0 10.
7 V V A A W W °C °C A mJ Total Power Dissipation (TC = 25°C) www.
DataSheet4U.
com Total Power Dis...


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