GaAs Power FETs
Description
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TC2997B
REV0_20040412
1.9 GHz 20 W Flange Ceramic Packaged GaAs Power FETs
FEATURES
20W Typical Power at 1.9 GHz 12 dB Typical Linear Power Gain at 1.9 GHz High Linearity: IP3 = 52 dBm Typical High Power Added Efficiency: Nominal PAE of 40 % Suitable for High Reliability Application Lg = 1 µm, Wg = 50 mm 100 % DC and RF T...
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