Dual N-Channel MOSFET
Description
Shenzhen TuoFeng Semiconductor Technology co., LTD
4946
Dual N-Channel High Density Trench MOSFET
PRODUCT SUMMARY
VDSS ID
FEATURES
RDS(on) (mΩ) Max
52 @ VGS = 10V
P
●Super high dense cell trench design for low RDS(on). ●Rugged and reliable. ●Surface Mount package.
5.0A 60V 4.0A
75 @ VGS = 4.5V
P
D1
D2
SOP-8
S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2
S1 ...
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