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K2959

Part Number	K2959
Manufacturer	Hitachi Semiconductor
Description	Silicon N Channel MOS FET
Published	Nov 12, 2014
Detailed Description	2SK2959 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 7mΩ typ. • 4V gate ...
Datasheet	K2959 PDF File

Overview

2SK2959 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 7mΩ typ.
• 4V gate drive devices.
• High speed switching Outline TO–220AB D G S ADE-208-569C (Z) 4th.
Edition Aug 1998 1 2 3 1.
Gate 2.
Drain(Flange 3.
Source 2SK2959 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation VDSS VGSS ID I Note1 D(pulse) I DR Pch Note2 Channel temperature Tch Storage temperature Tstg Note: 1.
PW ≤ 10µs, duty cycle ≤ 1 % 2.
Value at Tc = 25°C Ratings 30 ±20 50 200 50 75 150 –55 to +150 Unit V V A A A W °C °C Electri...

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