2SK3142
Silicon N Channel MOS FET High Speed Power Switching
Features
Low on-resistance RDS(on) = 4 mΩ typ.
Low drive current 4 V gate drive device can be driven from 5 V source
Outline
TO–220CFM
ADE-208-681A (Z) 2nd. Edition
February 1999
D
G
123
1. Gate
2. Drain
3. Source
S
2SK3142
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Drain t...
