RF POWER FIELD EFFECT TRANSISTOR
Description
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistor
N–Channel Enhancement–Mode Lateral MOSFET
Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for...
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