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WPM2005B

WillSEMI
Part Number WPM2005B
Manufacturer WillSEMI
Description Power MOSFET and Schottky Diode
Published Jan 9, 2016
Detailed Description WPM2005B Power MOSFET and Schottky Diode Features z Featuring a MOSFET and Schottky Diode z Independent Pinout to each...
Datasheet PDF File WPM2005B PDF File

WPM2005B
WPM2005B

Overview
WPM2005B Power MOSFET and Schottky Diode Features z Featuring a MOSFET and Schottky Diode z Independent Pinout to each Device to Ease Circuit Design z Ultra Low VF Schottky Applications z Li--Ion Battery Charging z High Side DC-DC Conversion Circuits z High Side Drive for Small Brushless DC Motors z Power Management in Portable, Battery Powered Products WPM2005B DFN3×2-8L MOSFET MAXIMUM RATINGS (TJ = 25ć unless otherwise noted) Parameter Symbol Value Units Drain-Source voltage Gate-Source Voltage Continuous Drain Current Drain Current-Pulsed Power Dissipation Junction Temperature Storage Temperature Thermal Resistance, Junction-to-Ambient VDSS VGS ID IDM PD TJ Tstg RԦJA -20 f8 -2.
7 -10 1.
1 150 -55~150 110 V V A A W ć ć ć/W SCHOTTKY DIODE MAXIMUM RATINGS(TJ = 25ć unless otherwise noted) Parameter Symbol Limits Unit Peak repetitive reverse voltage .
DC Blocking voltage Average rectified forward current VRRM VR IF 20 20 1 V V A pin connections: 1 A 2 A S 3 G 4 8 C 7 C 6 D D 5 Marking: JA J = Specific Device Code A = Date Code Order information PartNumber WPM2005BͲ8/TR Package DFN3*2- 8L  Shipping  3000Tape&Reel http://www.
willsemi.
com Page 1 9/8/2009 Rev1.
2 MOSFET ELECTRICAL CHARACTERISTICS(Tamb=25ć unless otherwise specified) WPM2005B Parameter Symbol Test Condition Min Typ Max Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate –Source leakage current BVDSS IDSS IGSS VGS = 0V,ID = -250ȝA VDS =-16V,VGS = 0V VGS = f12V,VDS = 0V -20 -1 f100 V ȝA nA On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VGS(th) VGS = VDS, ID =-250ȝA -0.
45 V RDS(on) VGS = -4.
5V, ID = -2.
7A VGS = -2.
5V,ID = -2.
2A 110 mȍ 160 mȍ gFS VDS = -10V, ID = -2.
7A 7.
0 S Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss VDS = -10V, VGS = 0V, f = 1.
0 MHz Crss 300 pF 150 pF 50 pF Switchi...


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