| Part Number | 1SS300 |
| Manufacturer | Toshiba Semiconductor |
| Title | Silicon Epitaxial Planar Type Diode |
| Description | TOSHIBA Diode Silicon Epitaxial Planar Type 1SS300 Ultra High Speed Switching Application 1SS300 Unit: mm AEC-Q101 Qualified (Note1) Small ... |
| Features |
e and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing...
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| File Size | 406.16KB |
| Datasheet |
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1SS300 : SMD Type Diodes ULTRA HIGH SPEED SWITCHING APPLICATIONS 1SS300 Features Small package Low forward voltage :VF(3) = 0.92 V(Typ) Fast reverse recovery time :trr = 1.6 ns (Typ) Small total capacitance :CT = 2.2 pF(Typ) Absolute Maximum Ratings Ta = 25 P aram eter Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10 ms) Power dissipation Junction Temperature Storage Temperature range (*) Unit rating.Total rating = Unit rating 1.5 Symbol VRM VR IFM IO IFSM P Tj Tstg Rating 85 80 300(*) 100(*) 2(*) 100 125 -55 to + 125 Unit V V mA mA A mW Electrical Characteristics Ta = 25 Parameter Forward voltage Reverse current .
1SS301 : TOSHIBA Diode Silicon Epitaxial Planar Type 1SS301 Ultra High Speed Switching Application 1SS301 Unit: mm AEC-Q101 Qualified (Note1) Small package : SC-70 Low forward voltage : VF (3) = 0.90 V (typ.) Fast reverse recovery time : trr = 1.6 ns (typ.) Small total capacitance : CT = 0.9 pF (typ.) Note1: For detail information, please contact our sales. Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current IFM 300 * mA Average forward current IO 100 * mA Surge current (10ms) IFSM 2* A Power dissipation PD (Note 2, 4) 200 mW PD (Note 3) 1.
1SS301 : XIN SEMICONDUCTOR ISO9002 1SS101 THUR 1SS301 SUPER HIGH SPEED SWITCHING DIODE SPECIAL DESIGN FOR PROTECTING SOLAR BATTERY FEATURES For general purpose applications These diodes features very low turn-on voltage and fastswitching. These devices are protected by a Pnjunction guard ring against excessive voltage, such as electrostatic discharges. R-1 APPLICATIONS High speed switch circuit IC polarity protection Solar battery polarity protection Small signal rectifier MECHANICAL DATA Case: JEDEC R-1 molded plastic body Polarity: color band denotes cathode end Mounting Position: Any Weight: 0.0063ounce, 0.18 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Dimensions in inches and (mill.
1SS301 : SMD Type Diodes ULTRA HIGH SPEED SWITCHING APPLICATIONS 1SS301 Features Low forward voltage:VF(3) = 0.90 V(Typ) Fast reverse recovery time:trr = 1.6 ns (Typ) Small total capacitance:CT = 0.9 pF(Typ) Absolute Maxim um Ratings Ta = 25 Param eter Maxim um (peak) reverse voltage Reverse voltage Maxim um (peak) forward current Average forward current Surge current (10 m s) Power dissipation Junction Tem perature Storage Tem perature (*) Unit rating.Total rating = Unit rating 1.5 Sym bol VRM VR IFM IO IFSM P Tj T stg Rating 85 80 300(*) 100(*) 2(*) 100 125 -55 to +125 Unit V V mA mA A mW Electrical Characteristics Ta = 25 Parameter Forward voltage Reverse current Total capacitance Rever.
1SS302 : www.DataSheet.co.kr 1SS302 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS302 Ultra High Speed Switching Applications z Small package z Low forward voltage z Small total capacitance : SC-70 : VF (3) = 0.90V (typ.) : CT = 0.9pF (typ.) Unit: mm z Fast reverse recovery time : trr = 1.6ns (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation Junction temperature Storage temperature Symbol VRM VR IFM IO IFSM P Tj Tstg Rating 85 80 300 (*) 100 (*) 2 (*) 100 125 −55~125 Unit V V mA mA A mW °C °C JEDEC EIAJ TOSHIBA Weight: 0.006g ― SC-70 1-2P1C Note.
1SS302 : www.DataSheet.co.kr SMD Type Diodes ULTRA HIGH SPEED SWITCHING APPLICATIONS 1SS302 Features Low forward voltage:VF(3) = 0.9 V(Typ) Fast reverse recovery time:trr = 1.6 ns (Typ) Small total capacitance:CT = 0.9 pF(Typ) A b s o lu te M a x im u m R a tin g s T a = 2 5 P a ra m e te r M a x im u m (p e a k ) re v e rs e v o lta g e R e v e rs e v o lta g e M a x im u m (p e a k ) fo rw a rd c u rre n t A v e ra g e fo rw a rd c u rre n t S u rg e c u rre n t (1 0 m s ) P o w e r d is s ip a tio n J u n c tio n T e m p e ra tu re S to ra g e T e m p e ra tu re (* ) U n it ra tin g .T o ta l ra tin g = U n it ra tin g 1 .5 S ym bol VRM VR IF M IO IF S M P Tj T st g R a tin g 85 80 3 0 0 (* .
1SS302A : Switching Diodes Silicon Epitaxial Planar 1SS302A 1. Applications • Ultra-High-Speed Switching 2. Features (1) AEC-Q101 qualified (Note 1) (2) Fast reverse recovery time : trr = 1.6 ns (typ.) Note 1: For detail information, please contact our sales. 3. Packaging and Internal Circuit USM 1SS302A 1: Anode 1 2: Cathode 2 3: Cathode1 / Anode 2 ©2017-2022 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2014-12 2022-11-22 Rev.5.0 1SS302A 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �) Characteristics Symbol Note Rating Unit Peak reverse voltage VRM 85 V Reverse voltage VR 80 Peak forward current IFM (Note 1) 300 m.
1SS306 : TOSHIBA Diode Silicon Epitaxial Planar Type 1SS306 Ultra High Speed Switching Application Small package : SC-61 Low forward voltage : VF (2) = 0.90 V (typ.) Fast reverse recovery time : trr = 30 ns (typ.) Small total capacitance : CT = 1.5 pF (typ.) 1SS306 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 250 V Reverse voltage VR 200 V Maximum (peak) forward current IFM 300 * mA Average forward current IO 100 * mA Surge current (10ms) IFSM 2* A Power dissipation PD (Note 1, 3) 200 mW PD (Note 2) 150 Junction temperature Tj (Note 1) 150 °C Tj (Note 2) 125 Storage temperature .
1SS307 : TOSHIBA Diode Silicon Epitaxial Planar Type 1SS307 1SS307 General Puropose Rectifier Applications Low forward voltage Low reverse current Small total capacitance Small package : VF = 1.0 V (typ.) : IR = 10 nA (max) : CT = 3.0 pF (typ.) : SC−59 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage Reverse voltage VRM VR 35 V 30 V Maximum (peak) forward current IFM 300 mA Average forward current IO 100 mA Surge current (10 ms) IFSM 1 A Power dissipation PD (Note 1, 3) 200 mW PD (Note 2) 150 Junction temperature Tj (Note 1) 150 °C Tj (Note 2) 125 Storage temperature range Tstg (Note 1) −5.
1SS307E : Switching Diodes Silicon Epitaxial Planar 1SS307E 1. Applications • General-Purpose Rectifiers 2. Features (1) Very low reverse current. : IR = 10 nA (max) (2) AEC-Q101 qualified (Note 1) Note 1: For detail information, please contact to our sales. 3. Packaging and Internal Circuit ESC 1SS307E 1: Cathode 2: Anode ©2018 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2014-12 2018-11-16 Rev.5.0 1SS307E 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Peak reverse voltage VRM 85 V Reverse voltage VR 80 Peak forward current IFM 300 mA Average rectified current IO 100 Power.
1SS308 : 1SS308 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS308 Ultra High Speed Switching Applications Unit: mm Small package : SC-74A Low forward voltage : VF (3) = 0.92 V (typ.) Fast reverse recovery time : trr = 1.6 ns (typ.) Small total capacitance : CT = 2.2 pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current IFM 300 (*) mA Average forward current IO 100 (*) mA Surge current (10ms) IFSM 2 (*) A Power dissipation PD (Note 1, 3) 300 mW PD (Note 2) 200 Junction temperature Tj (Note 1) 150 °C Tj (Note 2) 125 Storage temp.
1SS309 : TOSHIBA Diode Silicon Epitaxial Planar Type 1SS309 1SS309 Ultra High Speed Switching Applications Unit: mm Small package : SC-74A Low forward voltage : VF (3) = 0.90V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.9pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current IFM 300 (*) mA Average forward current IO 100 (*) mA Surge current (10ms) IFSM 2 (*) A Power dissipation PD (Note 1, 3) 300 mW PD (Note 2) 200 Junction temperature Tj (Note 1) 150 °C Tj (Note 2) 125 JEDEC ― Stor.