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1SS302

Toshiba Semiconductor
Part Number 1SS302
Manufacturer Toshiba Semiconductor
Description Diode
Published Mar 23, 2005
Detailed Description www.DataSheet.co.kr 1SS302 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS302 Ultra High Speed Switching Applications ...
Datasheet PDF File 1SS302 PDF File

1SS302
1SS302

Overview
www.
DataSheet.
co.
kr 1SS302 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS302 Ultra High Speed Switching Applications z Small package z Low forward voltage z Small total capacitance : SC-70 : VF (3) = 0.
90V (typ.
) : CT = 0.
9pF (typ.
) Unit: mm z Fast reverse recovery time : trr = 1.
6ns (typ.
) Absolute Maximum Ratings (Ta = 25°C) Characteristic Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation Junction temperature Storage temperature Symbol VRM VR IFM IO IFSM P Tj Tstg Rating 85 80 300 (*) 100 (*) 2 (*) 100 125 −55~125 Unit V V mA mA A mW °C °C JEDEC EIAJ TOSHIBA Weight: 0.
006g ― SC-70 1-2P1C Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) ar...


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