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1SS301

Toshiba Semiconductor
Part Number 1SS301
Manufacturer Toshiba Semiconductor
Description Diode
Published Mar 23, 2005
Detailed Description TOSHIBA Diode Silicon Epitaxial Planar Type 1SS301 1SS301 Ultra High Speed Switching Applications z Small package : ...
Datasheet PDF File 1SS301 PDF File

1SS301
1SS301

Overview
TOSHIBA Diode Silicon Epitaxial Planar Type 1SS301 1SS301 Ultra High Speed Switching Applications z Small package : SC-70 z Low forward voltage : VF (3) = 0.
9 V (typ.
) z Fast reverse recovery time : trr = 1.
6 ns (typ.
) z Small total capacitance : CT = 0.
9 pF (typ.
) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current Average forward current Surge current (10 ms) Power dissipation IFM IO IFSM P 300 (*) 100 (*) 2 (*) 100 mA mA A mW Junction temperature Storage temperature Tj 125 °C Tstg −55~125 °C JEDEC JEITA ― SC-70 Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the TOSHIBA 1-2P1B Weight: 0.
006 g (typ.
) reliability significantly even if the operating conditions (i.
e.
operating temperature/curr...


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