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1SS306

Toshiba Semiconductor
Part Number 1SS306
Manufacturer Toshiba Semiconductor
Description Silicon Diode
Published Mar 23, 2005
Detailed Description TOSHIBA Diode Silicon Epitaxial Planar Type 1SS306 High Voltage, High Speed Switching Applications 1SS306 Unit: mm  S...
Datasheet PDF File 1SS306 PDF File

1SS306
1SS306

Overview
TOSHIBA Diode Silicon Epitaxial Planar Type 1SS306 High Voltage, High Speed Switching Applications 1SS306 Unit: mm  Small package : SC-61  Low forward voltage : VF (2) = 0.
90 V (typ.
)  Fast reverse recovery time : trr = 30 ns (typ.
)  Small total capacitance : CT = 1.
5 pF (typ.
) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10 ms) Power dissipation VRM VR IFM IO IFSM P 250 200 300 (*) 100 (*) 2 (*) 150 V V mA mA A mW Junction temperature Storage temperature Tj 125 °C JEDEC Tstg −55 to 125 °C JEITA ― SC-61 Note: Using continuously under heavy loads (e.
g.
the application of high TOSHIBA 2-3J1A temperature/current/voltage and the significant change in Weight: 0.
013 g (typ.
) temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
*: Unit rating.
Total rating = unit rating × 1.
5 Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage Reverse current Total capacitance Reverse recovery time Symbol VF (1) VF (2) IR (1) IR (2) CT trr Test Condition IF = 10 mA IF = 100 mA VR = 50 V VR = 200 V VR = 0 V, f = 1 MHz IF = 10mA, Fig.
1 Min Typ.
Max Unit ― 0.
72 1.
0 ― 0.
9 1.
2 ― ― 0.
1 ― ― 1.
0 ― 1.
5 3.
0 ― 30 60 V μA pF ns Start of commercial production 1986-10 1 2015-06-08 Marking Fig.
1 Reverse Recovery Time (trr) Test Circuit OUTPUT 1SS306 2 2015-06-08 1SS306 1 3 2015-06-08 1SS306 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively "TO...


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