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1SS302A

Toshiba
Part Number 1SS302A
Manufacturer Toshiba
Description Silicon Epitaxial Planar Switching Diodes
Published Sep 18, 2016
Detailed Description Switching Diodes Silicon Epitaxial Planar 1SS302A 1. Applications • Ultra-High-Speed Switching 2. Features (1) Fast reve...
Datasheet PDF File 1SS302A PDF File

1SS302A
1SS302A

Overview
Switching Diodes Silicon Epitaxial Planar 1SS302A 1.
Applications • Ultra-High-Speed Switching 2.
Features (1) Fast reverse recovery time : trr = 1.
6 ns (typ.
) (2) AEC-Q101 qualified 3.
Packaging and Internal Circuit 1SS302A 1: Anode 1 2: Cathode 2 3: Cathode1 / Anode 2 USM 4.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Peak reverse voltage VRM 85 V Reverse voltage VR 80 Peak forward current IFM (Note 1) 300 mA Average rectified current IO (Note 1) 100 Power dissipation PD (Note 2) 100 mW Non-repetitive peak forward surge current IFSM (Note 1), (Note 3) 2 A Junction temperature Tj 150  Storage temperature Tstg -55 to 150  Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
...


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