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1SS307

Toshiba Semiconductor
Part Number 1SS307
Manufacturer Toshiba Semiconductor
Description Diode
Published Mar 23, 2005
Detailed Description TOSHIBA Diode Silicon Epitaxial Planar Type 1SS307 1SS307 General Puropose Rectifier Applications  Low forward volta...
Datasheet PDF File 1SS307 PDF File

1SS307
1SS307

Overview
TOSHIBA Diode Silicon Epitaxial Planar Type 1SS307 1SS307 General Puropose Rectifier Applications  Low forward voltage  Low reverse current  Small total capacitance  Small package : VF = 1.
0 V (typ.
) : IR = 10 nA (max) : CT = 3.
0 pF (typ.
) : SC−59 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage Reverse voltage VRM VR 35 V 30 V Maximum (peak) forward current IFM 300 mA Average forward current IO 100 mA Surge current (10 ms) IFSM 1 A Power dissipation PD (Note 1, 3) 200 mW PD (Note 2) 150 Junction temperature Tj (Note 1) 150 °C Tj (Note 2) 125 Storage temperature range Tstg (Note 1) −55 to 150 °C Tstg (Note 2) −55 to 125 JEDEC TO−236MOD JEITA SC−59 TOSHIBA 2-3F1S Weight: 12 mg (typ.
) Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in...


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