2SD2165

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 800(MIN)@ (VCE= 5V, IC= 1A) ·Low Collector-Emitter Saturation Voltage : VCE(sat) =1V(MIN)@ (IC = 3V, IB= 30mA) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use low frequency amplifilier and low switching sp...