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2SD2101

Hitachi Semiconductor
Part Number 2SD2101
Manufacturer Hitachi Semiconductor
Description Silicon NPN Transistor
Published Apr 3, 2005
Detailed Description 2SD2101 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base 2. Collec...
Datasheet PDF File 2SD2101 PDF File

2SD2101
2SD2101

Overview
2SD2101 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 1.
Base 2.
Collector 3.
Emitter 12 3 3 kΩ (Typ) 150 Ω (Typ) 3 2SD2101 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C(peak) PC PC * Junction temperature Storage temperature Note: 1.
Value at TC = 25°C.
Tj Tstg 1 Rating 200 200 7 10 15 2 30 150 –55 to +150 Unit V V V A A W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 200 200 170 7 — — 1500 — — — — Typ — — — — — — — — — — — Max — — — — 10 50 — 1.
5 3.
0 2.
0 3.
5 V V Unit V V V V µA Test conditions I C = 0.
1 mA, IE = 0 I C = 25 mA, RBE = ∞ I C = 5 A, L = 5 mH I E = 50 mA, IC = 0 VCB = 180 V, IE = 0 VCE = 180 V, RBE = ∞ VCE = 3 V, IC = 5 A*1 I C = 5 A, IB = 10 mA*1 I C = 10 A, IB = 100 mA*1 I C = 5 A, IB = 10 mA*1 I C = 10 A, IB = 100 mA*1 Collector to emitter breakdown V(BR)CEO voltage Collector to emitter sustain voltage Emitter to base breakdown voltage Collector cutoff current VCEO(SUS) V(BR)EBO I CBO I CEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Note: 1.
Pulse test.
hFE VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 2 2SD2101 Maximum Collector Dissipation Curve 30 Collector power dissipation Pc (W) 20 10 Collector current IC (A) 5 iC (peak) DC ) s °C 1m 25 = s m (T C 0 =1 tion PW era Op Area of Safe Operation 20 2 IC (max) 1.
0 0.
5 0.
2 0.
1 0.
05 0.
02 Ta = 25°C 1 Shot Pulse 1 10 0 50 100 Case temperature TC (°C) 150 3 10 30 100 300 Collector to emitter voltage VCE (V) Typical Output Characteristics 10 TC = 25°C 1.
6 1.
4 1.
2 6 1.
0 0.
8 DC Current Transfer Ratio vs.
Collector Current 10,000 DC current transfer ratio hFE 2.
0 PC = 30 Collector current IC (A) 8 1.
8 3,000 1,000 300 100 30 10 0.
1 TC = 75 °C W –2 5° ...


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