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2SD2102

Part Number	2SD2102
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Nov 17, 2016
Detailed Description	INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification 2SD2102 DESCRIPTION ·Coll...
Datasheet	2SD2102 PDF File

Overview

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification 2SD2102 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·High DC Current Gain : hFE= 1000(Min) @ IC= 2A, VCE= 3V APPLICATIONS ·Designed for low frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7V IC Collector Current-Continuous 4A ICM Base Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 8A 2 W 25 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification 2SD2102 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-E...

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