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2SD2105

Hitachi
Part Number 2SD2105
Manufacturer Hitachi
Description Silicon NPN Transistor
Published Mar 16, 2014
Detailed Description 2SD2105 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base 2. Collec...
Datasheet PDF File 2SD2105 PDF File

2SD2105
2SD2105

Overview
2SD2105 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 1.
Base 2.
Collector 3.
Emitter ID 1.
5 kΩ (Typ) 130 Ω (Typ) 3 12 3 Free Datasheet http://www.
nDatasheet.
com 2SD2105 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC IC(peak) PC PC* Junction temperature Storage temperature C to E diode forward current Note: 1.
Value at TC = 25°C.
Tj Tstg ID * 1 1 Rating 120 120 7 10 15 2 30 150 –55 to +150 10 Unit V V V A A W °C °C A Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 120 120 7 — — 1000 — — — — — Typ — — — — — — — — — — — Max — — — 10 10 20000 1.
5 3.
0 2.
0 3.
5 3.
0 V V V Unit V V V µA Test conditions IC = 0.
1 mA, IE = 0 IC = 25 mA, RBE = ∞ IE = 50 mA, IC = 0 VCB = 100 V, IE = 0 VCE = 100 V, RBE = ∞ VCE = 3 V, IC = 5 A* 1 Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO ICBO ICEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage C to E diode forward current Note: 1.
Pulse test.
hFE VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 VD IC = 5 A, IB = 10 mA* IC = 5 A, IB = 10 mA* ID = 10 A* 1 1 IC = 10 A, IB = 100 mA* 1 1 IC = 10 A, IB = 100 mA* 1 2 Free Datasheet http://www.
nDatasheet.
com 2SD2105 Maximum Collector Dissipation Curve 30 Collector power dissipation Pc (W) 20 10 0 50 100 Case temperature TC (°C) Area of Safe Operation 150 30 Collector current IC (A) 10 3 1.
0 0.
3 0.
1 iC (peak) IC (max) DC Op er at ion (T C = 25 °C PW s 1m = 10 ms Ta = 25°C 1 shot pulse ) 0.
03 0.
3 1.
0 3 10 30 100 300 Collector to emitter voltage VCE (V) Typical Output Characteristics 10 PC = 30 W 2.
0 Collector current IC (A) 8 1.
6 1.
4 1.
2 1.
0 1.
8 6 0.
8 4 0.
6 mA 2 TC = 25°C IB = 0 0 1 2 3 4...


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