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2SD2101

INCHANGE
Part Number 2SD2101
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 21, 2020
Detailed Description isc Silicon NPN Darlington Power Transistor 2SD2101 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V...
Datasheet PDF File 2SD2101 PDF File

2SD2101
2SD2101

Overview
isc Silicon NPN Darlington Power Transistor 2SD2101 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.
5V(Max) @IC= 5A ·High DC Current Gain : hFE= 1500(Min) @ IC= 5A, VCE= 3V ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 15 A 30 W 2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; RBE= ∞ V(SUS)CEO Collector-Emitter Sustaining Voltage IC= 50mA; L= 5mH V(BR)CBO Collector-Base Breakdown Voltage IC= 0.
1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 10mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 100mA VBE(sat)-1 Base-Emitter Saturation Voltage IC= 5A; IB= 10mA VBE(sat)-2 Base-Emitter Saturation Voltage IC= 10A; IB= 100mA ICBO Collector Cutoff Current VCB= 180V; IE= 0 ICEO Collector Cutoff Current VCE= 180V; RBE= ∞ hFE DC Current Gain IC= 5A; VCE= 3V 2SD2101 MIN TYP.
MAX UNIT 200 V 170 V 200 V 7 V 1.
5 V 3.
0 V 2.
0 V 3.
5 V 10 μA 50 μA 1500 Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of ...


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