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2SD2104

Hitachi Semiconductor
Part Number 2SD2104
Manufacturer Hitachi Semiconductor
Description Silicon NPN Transistor
Published Apr 3, 2005
Detailed Description 2SD2104 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base 2. Collec...
Datasheet PDF File 2SD2104 PDF File

2SD2104
2SD2104

Overview
2SD2104 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 1.
Base 2.
Collector 3.
Emitter 12 3 2 kΩ (Typ) 200 Ω (Typ) 3 2SD2104 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C(peak) PC PC * Junction temperature Storage temperature Note: 1.
Value at TC = 25°C.
Tj Tstg 1 Rating 120 120 7 8 12 2 25 150 –55 to +150 Unit V V V A A W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 120 120 7 — — 1000 — — — — Typ — — — — — — — — — — Max — — — 10 10 20000 1.
5 3.
0 2.
0 3.
5 V V Unit V V V µA Test conditions I C = 0.
1 mA, IE = 0 I C = 25 mA, RBE = ∞ I E = 50 mA, IC = 0 VCB = 100 V, IE = 0 VCE = 100 V, RBE = ∞ VCE = 3 V, IC = 4 A*1 I C = 4 A, IB = 8 mA*1 I C = 8 A, IB = 80 mA*1 I C = 4 A, IB = 8 mA*1 I C = 8 A, IB = 80 mA*1 Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Note: 1.
Pulse test.
hFE VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 2 2SD2104 Maximum Collector Dissipation Curve 30 Collector power dissipation PC (W) 20 10 Collector current IC (A) 5 2 1.
0 0.
5 0.
2 0.
1 0.
05 0.
02 0 50 100 Case temperature TC (°C) 150 1 3 10 30 100 300 Collector to emitter voltage VCE (V) Ta = 25°C 1 Shot Pulse IC(max) 20 iC(peak) Area of Safe Operation 1 µs 10 PW =1 0m Op er DC 0µ s 1m s s ion (T C = ) °C 25 at 10 Typical Output Characteristics 10 TC = 25°C 10,000 PC DC Current Transfer Ratio vs.
Collector Current Collector current IC (A) 8 0 2.
1 .
8 DC current transfer ratio hFE = 25 W 1.
.
6 14 6 1.
2 1.
0 0.
8 3,000 TC = 75 0.
6 m 4 A °C °C 25 °C 5 –2 1,000 VCE = 3 V 300 2 IB = 0 0 1 2 3 4 5 Collector to emitter voltage VCE ...


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