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FDMS3600S

MOSFET

Description

FDMS3600S PowerTrench® Power Stage FDMS3600S PowerTrench® Power Stage August 2011 25 V Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel „ Max rDS(on) = 5.6 mΩ at VGS = 10 V, ID = 15 A „ Max rDS(on) = 8.1 mΩ at VGS = 4.5 V, ID = 14 A Q2: N-Channel „ Max rDS(on) = 1.6 mΩ at VGS = 10 V, ID = 30 A „ Max rDS(on) = 2.4 mΩ at VGS = ...


Fairchild Semiconductor

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