MOSFET
FDMS3600S PowerTrench® Power Stage FDMS3600S PowerTrench® Power Stage August 2011 25 V Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel Max rDS(on) = 5.6 mΩ at VGS = 10 V, ID = 15 A Max rDS(on) = 8.1 mΩ at VGS = 4.5 V, ID = 14 A Q2: N-Channel Max rDS(on) = 1.6 mΩ at VGS = 10 V, ID = 30 A Max rDS(on) = 2.4 mΩ at VGS = ...
Fairchild Semiconductor