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FDMS3602S

Fairchild Semiconductor
Part Number FDMS3602S
Manufacturer Fairchild Semiconductor
Description MOSFET
Published Jan 11, 2017
Detailed Description FDMS3602S PowerTrench® Power Stage FDMS3602S PowerTrench® Power Stage July 2016 25 V Asymmetric Dual N-Channel MOSFET...
Datasheet PDF File FDMS3602S PDF File

FDMS3602S
FDMS3602S

Overview
FDMS3602S PowerTrench® Power Stage FDMS3602S PowerTrench® Power Stage July 2016 25 V Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel „ Max rDS(on) = 5.
6 mΩ at VGS = 10 V, ID = 15 A „ Max rDS(on) = 8.
1 mΩ at VGS = 4.
5 V, ID = 14 A Q2: N-Channel „ Max rDS(on) = 2.
2 mΩ at VGS = 10 V, ID = 26 A „ Max rDS(on) = 3.
4 mΩ at VGS = 4.
5 V, ID = 22 A „ Low inductance packaging shortens rise/fall times, resulting in lower switching losses „ MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing „ RoHS Compliant This device includes two specialized N-Channel MOSFETs in a dual PQFN package.
The switch node has been internally connected to enable easy placement and routing of synchronous buck converters.
The control MOSFET (Q1) and synchronous SyncFETTM (Q2) have been designed to provide optimal power efficiency.
Applications „ Computing „ Communications „ General Purpose Point of Load „ Notebook VCORE ...


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