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FDMS3604S

ON Semiconductor
Part Number FDMS3604S
Manufacturer ON Semiconductor
Description N-Channel MOSFET
Published Dec 12, 2021
Detailed Description FDMS3604S MOSFET – N-Channel, POWERTRENCH), Power Stage, Asymetric Dual General Description This device includes two sp...
Datasheet PDF File FDMS3604S PDF File

FDMS3604S
FDMS3604S

Overview
FDMS3604S MOSFET – N-Channel, POWERTRENCH), Power Stage, Asymetric Dual General Description This device includes two specialized N−Channel MOSFETs in a dual PQFN package.
The switch node has been internally connected to enable easy placement and routing of synchronous buck converters.
The control MOSFET (Q1) and synchronous SyncFET™ (Q2) have been designed to provide optimal power efficiency.
Features Q1: N−Channel • Max rDS(on) = 8 mW at VGS = 10 V, ID = 13 A • Max rDS(on) = 11 mW at VGS = 4.
5 V, ID = 11 A Q2: N−Channel • Max rDS(on) = 2.
6 mW at VGS = 10 V, ID = 23 A • Max rDS(on) = 3.
5 mW at VGS = 4.
5 V, ID = 21 A • Low Inductance Packaging Shortens Rise/Fall Times, Resulting in Lower Switching Losses • MOSFET Integration Enables Optimum Layout for Lower Circuit Inductance and Reduced Switch Node Ringing • This Device is Pb−Free and is RoHS Compliant Applications • Computing • Communications • General Purpose Point of Load • Notebook VCORE www.
onsemi.
com G1 D1 D1 D1 D1 PHASE (S1/D2) G2 S2 S2 S2 Top Bottom PQFN8 5x6, 1.
27P CASE 483AJ MARKING DIAGRAM $Y&Z&3&K 22CA N7CC $Y &Z &3 &K 22CA N7CC = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code PIN CONFIGURATION S2 5 S2 6 S2 7 G2 8 Q2 4 D1 PHASE 3 D1 2 D1 1 G1 Q1 ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2011 1 January, 2020 − Rev.
3 Publication Order Number: FDMS3604S/D FDMS3604S MOSFET MAXIMUM RATINGS TA = 25°C Unless Otherwise Noted Symbol Parameter VDS Drain to Source Voltage VDSt VGS Drain to Source Transient Voltage ( tTransient < 100 ns) Gate to Source Voltage (Note 3) ID Drain Current −Continuous (Package limited) TC = 25 °C −Continuous (Silicon limited) TC = 25 °C −Continuous TA = 25 °C −Pulsed EAS Single Pulse Avalanche Energy PD TJ, TSTG Power Dissipation for Single Operation TA = 25 °C Power Dissipation for Single Oper...


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