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FDMS3602S

ON Semiconductor
Part Number FDMS3602S
Manufacturer ON Semiconductor
Description 25V Asymmetric Dual N-Channel MOSFET
Published Dec 17, 2019
Detailed Description FDMS3602S PowerTrench® Power Stage FDMS3602S PowerTrench® Power Stage 25 V Asymmetric Dual N-Channel MOSFET General De...
Datasheet PDF File FDMS3602S PDF File

FDMS3602S
FDMS3602S

Overview
FDMS3602S PowerTrench® Power Stage FDMS3602S PowerTrench® Power Stage 25 V Asymmetric Dual N-Channel MOSFET General Description Features Q1: N-Channel „ Max rDS(on) = 5.
6 mΩ at VGS = 10 V, ID = 15 A „ Max rDS(on) = 8.
1 mΩ at VGS = 4.
5 V, ID = 14 A Q2: N-Channel „ Max rDS(on) = 2.
2 mΩ at VGS = 10 V, ID = 26 A „ Max rDS(on) = 3.
4 mΩ at VGS = 4.
5 V, ID = 22 A „ Low inductance packaging shortens rise/fall times, resulting in lower switching losses „ MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing „ RoHS Compliant This device includes two specialized N-Channel MOSFETs in a dual PQFN package.
The switch node has been internally connected to enable easy placement and routing of synchronous buck converters.
The control MOSFET (Q1) and synchronous SyncFETTM (Q2) have been designed to provide optimal power efficiency.
Applications „ Computing „ Communications „ General Purpose Point of Load „ Notebook VCORE „ Server Pin 1 Pin 1 G1 D1 D1 D1 D1 S2 PHASE (S1/D2) G2 S2 S2 S2 Top Bottom MOSFET Maximum Ratings TA = 25°C unless otherwise noted.
S2 S2 G2 Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation for Single Operation Power Dissipation for Single Operation Operating and Storage Junction Temperature Range (Note 3) TC = 25 °C TC = 25 °C TA = 25 °C TA = 25°C TA = 25°C 5 6 7 8 Q2 4 D1 PHASE 3 D1 2 D1 Q1 1 G1 Q1 Q2 25 25 ±20 ±20 30 40 65 151a 135 261b 40 504 2.
21a 1.
01c 100 1445 2.
51b 1.
01d -55 to +150 Units V V A mJ W °C Thermal Characteristics RθJA RθJA RθJC Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Package Marking and Ordering Information Device Marking 22OA N7OC Device FDMS3602S Package Power 56 ©2011 Semiconductor Components Industries,...


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